Accomplishments
(Note: V_B²/R_onis the Figure of Merit (FOM). The higher the FOM, the better the device.)

**Unipolar Devices**
Device	Drift Layer Doping Concentration (cm^-3)	Drift Layer Thickness (um)	Blocking Voltage (kV)	Specific On-Resistance (mOhm-cm²)	V_B²/R_on (MW/cm²)
JBS Diode (4H)	1.4 x 10¹⁵	45	5.96	24	1,480
Schottky Diode (4H)	5.6 x 10¹⁴	115	10.8	97	1,202
TI-VJFET (4H, normally-on)	7 x 10¹⁵	9.4	1.71	2.77	1,056
TI-VJFET (4H)	4.9 x 10¹⁴	120	11	130	930
TI-VJFET (4H)	7 x 10¹⁵	9.4	1.72	3.6	828
MPS Diode (4H)	2 x 10¹⁵	30	4.28	25.6	717
MPS Diode (4H)	6.6 x 10¹⁵	10.3	1.78	6.68	474
Planar VJFET (4H)	1.9 x 10¹⁵	30	4.34	40	471
Planar VJFET (4H)	5.7 x 10¹⁵	15	1.53	17.5	134

**PiN diode and GTO**
Device	Drift Layer Doping Concentration (cm^-3)	Drift Layer Thickness (um)	Rating	Specific On-Resistance (mOhm-cm²)
PiN (4H)	1 x 10¹⁵	29	5kV-100A	637A/cm² @4.5V and 200C
GTO (4H)	7.2 x 10¹⁵	7	810V	1000A/cm² @4.5V

**Bipolar Junction Transistors**
Device	Drift Layer Doping Concentration (cm^-3)	Drift Layer Thickness (um)	Current Gain	Blocking Voltage (V)	Specific On-Resistance (mOhm-cm²)	V_B²/R_on (MW/cm²)
BJT (4H)	7 x 10¹⁴	50	7	9,300	49	1,765
BJT (4H)	6.7 x 10¹⁵	12	8.8	1,836	4.7	717
BJT (4H)	7.3 x 10¹⁵	12	70	1600	5.1	502
BJT (4H)	5.0 x 10¹⁵	12	33	1036	2.9	370
BJT (4H)	8.5 x 10¹⁵	12	24.8	1750	12	255
BJT (4H)	8.5 x 10¹⁵	12	18.8	757	2.9	198
Darlington BJT (4H)	8.5 x 10¹⁵	12	462	1570	16.7	148
BJT (4H)	6 x 10¹⁵	12	47	500	8.7	29
Darlington BJT (4H)	6 x 10¹⁵	12	1517	500	12.9	19.4

**World's First SiC Power IC**
Device	Lateral Drift Layer Doping Con. (cm^-3)	Lateral Drift Layer Thickness (um)	Power Switching Frequency (MHz)	Blocking Voltage (V)	Specific On-Resistance (mOhm-cm²)
JFET JFET1 (4H)	2 x 10¹⁷	1.0	10	1,000	9.1

**SiC Single Photon Detectors**
Demonstration of 4H-SiC UV Single Pnoton Counting Avalanche Photodiode	4H-SiC Single Photon Avalanche Diode for 280nm UV Applications