Best Performing SiC Devices
(To include your most recent record performance SiC devices, please email information to jzhao@ece.rutgers.edu)
(Note: VB2/Ron is the Figure of Merit (FOM). The higher the FOM, the better the device.)

 
SiC Single Photon Detectors
 
Demonstration of 4H-SiC UV Single Pnoton Counting Avalanche Photodiode
4H-SiC Single Photon Avalanche Diode for 280nm UV Applications

Diodes
Device Blocking Voltage
(kV)		 Specific On-Resistance
(mOhm-cm2)		 VB2/Ron
(MW/cm2)		 Reference
SBD Diode 
(4H)		 4.15 9.07 1,898 CRIEPI
JBS Diode 
(4H)		 5.96 24 1,480 Rutgers
Schottky Diode 
(4H)		 10.8 97 1,202 Rutgers / USCI
JBS Diode
(4H)		 2.8 8 980 KTH / ABB
MPS Diode
(4H)		 4.38 20.7 928 Rutgers / USCI
Schottky Diode 
(4H)		 4.9 43 558 Purdue Univ.
MPS Diode
(4H)		 1.78 6.68 474 Rutgers / USCI
MPS Diode
(4H)		 1.5 10 225 Cree, Inc.
PiN Diode
(4H)		 19.2 7.5V @ 100A/cm2 - Kansai EP / Cree
 
JFETs
Device Blocking Voltage
(kV)		 Specific On-Resistance
(mOhm-cm2)		 VB2/Ron
(MW/cm2)		 Reference
TI-VJFET 
(4H, normally-on)		 1.71 2.77 1,056 Rutgers / USCI
TI-VJFET 
(4H)		 11 130 930 Rutgers
TI-VJFET 
(4H)		 1.72 3.6 828 Rutgers / USCI
JFET
(4H,normally-on)		 3.5 25 490 SiCED
Planar VJFET
(4H)		 4.34 40 471 Rutgers / USCI
SEJFET
(4H)		 5.0 69 362 Kansai EP / Cree
JFET
(4H)		 4.45 121 164 Kansai EP / Cree
JFET
(4H)		 5.5 218 139 Kansai EP / Cree
Planar VJFET
(4H)		 1.53 17.5 134 Rutgers / USCI
 
Bipolar Devices
Device Current Gain Blocking Voltage
(V)		 Specific On-Resistance
(mOhm-cm2)		 VB2/Ron
(MW/cm2)		 Reference
BJT (4H) 7 9,300 49 1,765 Rutgers
BJT (4H) 44 3,200 8.1 1,264 Cree, inc.
BJT (4H) 8.8 1,840 4.7 717 Rutgers
BJT (4H) 40 1,600 4.5 569 Cree, inc.
BJT (4H) 70 1,600 5.1 502 Rutgers / USCI
BJT (4H) 20 1,800 7.0 463 Cree, inc.
BJT (4H) 33 1,036 2.9 370 Rutgers/USCI
BJT (4H) 24.8 1,750 12 255 Rutgers / USCI
BJT (4H) 18.8 757 2.9 198 Rutgers / USCI
Darlington 
BJT (4H)		 462 1,570 16.7 148 Rutgers / USCI
BJT (4H) 20 3,200 78 131 Purdue Univ.
BJT (4H) 47 500 8.7 29 Rutgers / USCI
Darlington 
BJT (4H)		 1517 500 12.9 19.4 Rutgers / USCI
 
MOSFETs and HEMTs
Device  Blocking
Voltage
(kV) 		 Specific
On-Resistance
(mOhm-cm2) 		 VB2/RON
(MW/cm2) 		 Reference 
DMOSFET (4H)  10  111  901  Cree, Inc. 
DMOSFET (4H)  10  123  813  Cree, Inc. 
DMOSFET (4H)  10  258  388  Cree, Inc. 
DMOSFET (4H)  1.2  5  288  Mitsubishi Electric 
SEMOSFET (4H)  5.0  88 284  Kansai EP / Cree 
GaN HEMT 
(normally-on) 		 1.1  4.9  263  UCSB / Yale 
DMOSFET (4H)  7.0  189  259  Cree, Inc. 
UMOSFET (4H) 5.05  105  243  Purdue Univ. 
IEMOSFET (4H)  0.66  1.8  242  PERC-AIST 
IEMOSFET (4H, C-face)  0.7  2.7  181  PERC-AIST 
DMOSFET (4H)  2  27  148  Purdue Univ. 
DMOSFET (4H)  2.4  42  137  Cree, Inc. 
UMOS ACCUFET (4H) 1.4  15.7  125  Purdue Univ. 
UMOSFET (4H)  5  228  110  Purdue Univ. 
UMOSFET(4H) 3.06  121  77  Purdue Univ. 
DMOSFET (6H)  1.8  46  70  Siemens AG 
SIAFET (4H)  4.58  387  54  Kansai EP / Cree 
SIAFET (4H)  6.1  732  50.8  Kansai EP / Cree 
UMOS ACCUFET (4H) 0.45 10.9 18.6 Denso Corp.